三族氮化物发光器件及工艺研究
Research On III-nitride Optoelectrical devices and processes
Abstract
本文围绕三族氮化物发光器件，对发光二极管器件结构，工艺及激光器谐振腔设计等方面进行研究，主要包括以下三个方面： 1.提出了一种新型的InGaN/GaN多量子阱发光二极管（LED）结构。该结构LED在p型GaN层生长一层薄层n型重掺InGaN层，利用内外同心环的双p电极结构即可实现发光。仅需要一次光刻和金属沉积，大大简化工艺步骤。同时，该LED的电致发光谱只有450nm的量子阱发光峰，说明电子空穴并未在p型GaN层进行复合发光。与传统n，p电极LED相比，同样电流密度下，该LED发光强度仅下降6.7%。我们利用这种简易的发光结构成功制备厦门大学'XMU'发光Logo图形。与LCD液晶，OL... Toward to high efficient opto-electronic light emitting device and laser device, several problems were targeted in this paper, specifically included: 1. We demonstrated a new kind of InGaN/GaN multi-quantum well (MQW) light-emitting diode (LED) with simplified fabrication processes, where only one round of photolithography and electrode deposition is necessary. The electrical and optical properti...