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dc.contributor.advisor郭东辉
dc.contributor.author陈金龙
dc.date.accessioned2018-12-05T01:48:25Z
dc.date.available2018-12-05T01:48:25Z
dc.date.issued2017-12-28
dc.identifier.urihttps://dspace.xmu.edu.cn/handle/2288/170735
dc.description.abstractGFET(石墨烯场效应管)以其超高的电导率和极小的器件尺寸有望续写摩尔定律的神话,成为新一代半导体器件。而构成GFET的核心材料——石墨烯的高品质制备是研究微纳器件性能及其应用的基础和前提。作为传统CVD法和MEMS技术的结合——μCVD(微型化学气相沉积)系统具有低成本、高效率、可重复性等优势,极大地促进了纳米材料制备方案的改进及其应用的发展。 本文首先介绍了GFET的结构特征和制备工艺,相应地阐述了石墨烯的特性、转移技术、工艺目标等,接着从μCVD系统的三个关键技术——结构设计、温度测控和显微成像展开论述。结构设计技术解决了μCVD芯片的温度分布问题,使电流产生的焦耳热均匀分布在反应平台...
dc.description.abstractGFET (Graphene Field Effect Transistor) with its ultra-high conductivity and very small device size is expected to write the myth of Moore's Law,Becoming a new generation of semiconductor devices.The GFET's core nanomaterials,graphene's high-quality, large-size preparation is the basis and premise of studying the performance and application of micro-nano devices.The combination of traditional CVD ...
dc.language.isozh_CN
dc.relation.urihttps://catalog.xmu.edu.cn/opac/openlink.php?strText=58560&doctype=ALL&strSearchType=callno
dc.source.urihttps://etd.xmu.edu.cn/detail.asp?serial=61579
dc.subjectGFET
dc.subjectμCVD
dc.subject石墨烯
dc.subject温度控制
dc.subject显微成像
dc.subjectμCVD
dc.subjectGraphene
dc.subjectTemperature control
dc.subjectMicroscopic imaging
dc.title微型G-FET器件研制系统及其关键技术
dc.title.alternativeMicro-System of G-FET Device Development and its Key Technology
dc.typethesis
dc.date.replied2017-05-19
dc.description.note学位:工程硕士
dc.description.note院系专业:信息科学与技术学院_工程硕士(电子与通信工程)
dc.description.note学号:23120141153109


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