绝缘衬底上锡诱导锗低温晶化制备锗锡纳米晶薄膜的研究
Study of low-temperature formation of GeSn nanocrystallite thin films by Sn induced Ge crystallization on insulating substrate
Abstract
由IV族元素Ge、Sn组成的GeSn合金材料近年来受到了广泛关注，理论研究表明，当Sn组分高于6.3%时，GeSn合金可以转变为直接带隙材料，而且随着Sn组分的改变带隙在0.66eV到0eV范围内连续可调，这可以拓宽Si基材料在红外波段的应用范围。同时GeSn合金材料的迁移率远高于传统的Si、Ge材料，可以应用于制备高速TFT。在绝缘衬底或者柔性衬底上磁控溅射法制备多晶GeSn合金，在低价太阳能电池和柔性薄膜晶体管等方面具有潜在的应用价值。但是在绝缘衬底或者柔性衬底上生长高质量的GeSn合金还面临着几个困难。首先，Sn在Ge中低的固溶度较低( Germanium Tin alloys, being comprised of Group-IV elements, have recently received much attention due to the fact that their directband-transition behavior is predicted when Sn content is greater than 6.3%. Moreover, the bandgap of GeSn alloys can also be readily adjusted from 0 to 0.66 eV by controlling the value of x from 0 to 1. This gives rise to the potential to extend the infrared applicatio...