• 中文
    • English
  • English 
    • 中文
    • English
  • Login
View Item 
  •   DSpace Home
  • 物理科学与技术学院
  • 物理技术-学位论文
  • View Item
  •   DSpace Home
  • 物理科学与技术学院
  • 物理技术-学位论文
  • View Item
JavaScript is disabled for your browser. Some features of this site may not work without it.

绝缘衬底上锡诱导锗低温晶化制备锗锡纳米晶薄膜的研究
Study of low-temperature formation of GeSn nanocrystallite thin films by Sn induced Ge crystallization on insulating substrate

Thumbnail
Full Text
绝缘衬底上锡诱导锗低温晶化制备锗锡纳米晶薄膜的研究.pdf (601.1Kb)
Date
2017-12-27
Author
陈宁利
Collections
  • 物理技术-学位论文 [1822]
Show full item record
Abstract
由IV族元素Ge、Sn组成的GeSn合金材料近年来受到了广泛关注,理论研究表明,当Sn组分高于6.3%时,GeSn合金可以转变为直接带隙材料,而且随着Sn组分的改变带隙在0.66eV到0eV范围内连续可调,这可以拓宽Si基材料在红外波段的应用范围。同时GeSn合金材料的迁移率远高于传统的Si、Ge材料,可以应用于制备高速TFT。在绝缘衬底或者柔性衬底上磁控溅射法制备多晶GeSn合金,在低价太阳能电池和柔性薄膜晶体管等方面具有潜在的应用价值。但是在绝缘衬底或者柔性衬底上生长高质量的GeSn合金还面临着几个困难。首先,Sn在Ge中低的固溶度较低(
 
Germanium Tin alloys, being comprised of Group-IV elements, have recently received much attention due to the fact that their directband-transition behavior is predicted when Sn content is greater than 6.3%. Moreover, the bandgap of GeSn alloys can also be readily adjusted from 0 to 0.66 eV by controlling the value of x from 0 to 1. This gives rise to the potential to extend the infrared applicatio...
 
URI
https://dspace.xmu.edu.cn/handle/2288/170380

copyright © 2002-2016  Duraspace  Theme by @mire  厦门大学图书馆  
About | Policies
 

 

Browse

All of DSpaceCommunities & CollectionsBy Issue DateAuthorsTitlesSubjectsThis CollectionBy Issue DateAuthorsTitlesSubjects

My Account

LoginRegister

copyright © 2002-2016  Duraspace  Theme by @mire  厦门大学图书馆  
About | Policies