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dc.contributor.advisor陈松岩
dc.contributor.author毛丹枫
dc.date.accessioned2018-12-05T01:46:19Z
dc.date.available2018-12-05T01:46:19Z
dc.date.issued2017-12-27
dc.identifier.urihttps://dspace.xmu.edu.cn/handle/2288/170338
dc.description.abstract与Si材料相比,Ge材料具有更高的的电子和空穴迁移率,在1.3-1.5μm通信通信波段具有更高的吸收系数。此外,Ge工艺与现如今成熟的Si工艺相互兼容,Ge与GaAs晶格失配极小(~0.07%),可用作于制备III–V族器件的外延平台,这使得Ge材料成为了下一代高性能微电子和光电子器件的理想候选材料。然而,Ge器件容易产生更大的漏电流,其尺寸进一步减小容易导致小尺寸效应。绝缘体上锗(Germanium-on-Insulator,GOI)材料具有Ge材料的优势和绝缘体上硅(Silicon-on-Insulator,SOI)的结构优点,可以很好地解决体Ge器件的不足。通过Ge-SiO2直接晶片键合...
dc.description.abstractCompared with silicon, Ge offer higher carrier mobility and more favourable absorption coefficient in the near infrared wavelength regime (1.3-1.5 μm). Besides, it is compatible with Si CMOS process and can be used as a III-V group material epitaxy template due to the small lattice mismatch between Ge and GaAs (0.07%). These make Ge a promising candidate for next-generation high-performance microe...
dc.language.isozh_CN
dc.relation.urihttps://catalog.xmu.edu.cn/opac/openlink.php?strText=58332&doctype=ALL&strSearchType=callno
dc.source.urihttps://etd.xmu.edu.cn/detail.asp?serial=61648
dc.subject绝缘体上锗(GOI)
dc.subjectGe-SiO2键合
dc.subject超薄Si薄膜
dc.subject表面亲水性
dc.subject键合强度
dc.subjectGOI减薄
dc.subjectgermanium-on-insulator (GOI)
dc.subjectGe-SiO2 bonding
dc.subjectultra-thin Si film
dc.subjectbonding strength
dc.subjectsurface hydrophilicity
dc.subjectthinning of GOI
dc.title超薄Si过渡层制备绝缘体上Ge(GOI )材料研究
dc.title.alternativeResearch on germanium-on-insulator (GOI) material fabricated by an intermediate ultra-thin silicon layer
dc.typethesis
dc.date.replied2017-05-20
dc.description.note学位:理学硕士
dc.description.note院系专业:物理科学与技术学院_生物物理和软凝聚态
dc.description.note学号:19820141152972


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