AlGaN 隧穿结的设计和特性优化
Design and optimization of AlGaN tunneling junction
Abstract
摘要 AlGaN半导体材料作为第三代宽禁带半导体的代表,具有直接带隙宽、原子键强、热导率高、化学稳定性好(几乎不被任何酸腐蚀)以及抗辐照能力强等物理性质,在光电子、高温大功率器件和高频微波器件应用方面有着广阔的前景。仰赖于直接带隙宽,通过调节合金组分,带隙可在3.4至6.2eV的光谱响应范围内调节,有利于能带剪裁,成为工作在紫外到深紫外范围的发光二极管、激光二极管以及探测器等器件的理想材料,受到业界的广泛关注。特别是作为紫外固态光源,相比于同样工作于紫外波段的传统汞灯,AlGaN基紫外光源除了重量轻、体积小以及节能环保外,在工作效率、启动时间、使用寿命、波长单色性和稳定性方面都具有无可比拟的... Abstract AlGaN semiconductors as the third generation wide band gap semiconductor, with superior properties including a wide direct band gap, strong atomic bond, high thermal conductivity, good chemical stability and strong resistance to radiation and so on, offer broad prospects in optoelectronics, high-temperature and high-power devices and high frequency microwave device applications. Rely on ...