原子层沉积制备HfOxNy 薄膜及其阻变器件研究

Abstract

随着半导体技术的不断发展，目前占据非易失性存储器市场主流的闪存存储器由于器件等比例缩小带来的电荷泄漏、可靠性差等一系列难以克服的问题发展受到制约。近年来一种新型阻变存储器（RRAM）的研究正得到广泛关注，有望成为下一代主流非挥发存储器。与传统存储器相比，RRAM具有结构简单、存储密度高和功耗低等优势。尽管阻变特性在过渡金属氧化物、氮化物、硫系材料和非晶硅等材料体系中都得到广泛研究，但是基于氮氧化物的阻变特性研究还较为缺乏。氮氧化物与CMOS工艺兼容，热稳定性好。本论文选取HfOxNy作为阻变功能材料，研究其阻变特性并应用于制备阻变器件，具有重要的研究意义。 本论文通过等离子体原子层沉积技术生...

With the development of semiconductor technology, nowadays the dominant traditional Flash memory is going to facing a series of problemssuch as reliability and charge leakage that are difficult to overcome in the process of scaling down of device. In recent years, resistive random access memory (RRAM) which has gained great attention as it is regarded as one of the most promising candidate in the ...