Simulation of spontaneous emission spectrum of degenerate Ge under large injection level
- 物理技术－已发表论文 
基于费米狄拉克模型模拟了应变、温度以及掺杂对简并态锗的直接带自发辐射谱的影响.随着温度升高,更多的电子被激发到导带中,使得锗自发辐射谱的峰值强度; 和积分强度随温度的升高而增大.对自发辐射谱峰值强度的m因子进行计算,结果表明张应变可以显著提高锗自发辐射的温度稳定性.在相同应变水平下,由Gam; ma-hh跃迁引起的自发辐射谱峰值强度大于Gamma-hh跃迁引起的自发辐射谱峰值强度,但二者的积分强度几乎相等.此外,计算结果还证明了n型掺杂; 能显著提高锗的自发辐射强度.以上结果对于研究简并态半导体的自发辐射性质有重要的参考意义.Germanium (Ge) is considered as a promising material for silicon (Si) based light source. Based on tensile strain and n-type heavy doping approaches, the light emitting efficiency of Ge can be improved. Nevertheless, due to the difficulty in introducing large tensile strain into Ge, the photoluminescence or electroluminescence of Ge is demonstrated under degenerated states currently. Traditional spontaneous emission (SE) theory deduced from Boltzmann approximation is inapplicable for this case. To accurately analyze the SE properties of Ge, the influences of strain, temperature and doping on quasi-Fermi level and subsequent SE spectrum of degenerated Ge are theoretically investigated based on Fermi-Dirac distribution model. Owing to large density of states (DOS) in heavy hole (hh) the valance band (VB) and L valley, it is found that compressive strain has a negligible effect on the quasi-Fermi level under carrier concentration of 10(19)-10(20) cm 3, while tensile strain is of benefit to the improvement of carrier occupation levels, leading to dramatic increases of both peak and integrated intensities of SE spectra. Although the peak intensity of SE from Gamma-hh transition is larger than that from Gamma-lh transition regardless of strain levels in Ge, the integrated intensities of SE from Gamma-hh and Gamma-lh transitions are almost equal. With the increase of sample temperature, the carriers acquire lager kinetic energy, resulting in more dispersive distribution of electrons (holes) in valley (VB). However, more electrons (holes) are induced into conduction (valence) band at the same time. And according to Varshini's law the energy difference between and L valleys is reduced at higher temperature. Thus, both the peak and integrated intensities of the SE spectra become larger at higher temperature. It is impressive that n-type doping can greatly enhance the SE intensity compared with p-type doping irrespective of strain levels in Ge, demonstrating the significance of n-type doping in the enhancement of Ge SE. Furthermore, it is found that m factors, which can be extracted from linear fitting of log L -log. n curves, diminish at heavier doping concentration. Under tensile strain condition, the variation of m factors for Ge SE with the sample temperature becomes less sensitive, implying that the tensile strain can effectively enhance the temperature stability of Ge SE. These results provide a significant guidance for analyzing the SE properties of degenerated Ge and other degenerated semiconductors.