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dc.contributor.author黄燕华
dc.contributor.author韩响
dc.contributor.author陈松岩
dc.date.accessioned2018-11-26T08:50:36Z
dc.date.available2018-11-26T08:50:36Z
dc.date.issued2017
dc.identifier.citation光电子·激光,2017,(10):1101-1107
dc.identifier.issn1005-0086
dc.identifier.other10.16136/j.joel.2017.10.0082
dc.identifier.urihttps://dspace.xmu.edu.cn/handle/2288/165543
dc.description.abstract以铜(Cu)作为催化剂,采用两步化学腐蚀法成功制备了微纳米多孔硅(PS)。本文方法成本低廉、操作简易。系统研究了腐蚀液中H_2O_2浓度、Si衬; 底掺杂浓度、腐蚀液温度和腐蚀时间对PS表面形貌和腐蚀深度的影响,并得到最佳制备参数。高、低掺Si衬底所采用的最佳配比腐蚀液中的H_2O_2浓度分; 别达到0.70mol/L和0.24mol/L。在25℃腐蚀液中,腐蚀2h得到约200nm深的纳米级孔洞,其表面反射率在宽波段内降低到5%以下;而; 在50℃腐蚀液中,经过2~4h的腐蚀,可得到14~41mum深的结构稳定的微纳米级孔洞。文中还对Cu辅助腐蚀与其他金属辅助腐蚀(MACE)作了对; 比,分析了Cu辅助腐蚀获得锥状孔洞的原因和机理。
dc.description.abstractPorous silicon with micro-nano sizes has been prepared by the; metal-assisted chemical etching approach with Cu nanoparticles as the; catalyst agents.This method has the advantages of low cost and simple; operation.The effects of the preparation condition on the morphologies; and etching depth of the porous structures is discussed,such as the; concentration of H_2O_2,the doping level of silicon substrate, the; temperature of etching solution and the etching time.An optimal etching; condition is obtained,the concentration of H_2O_2in the reactant is more; than 0.70mol/L for highly doped silicon substrate,and more than; 0.24mol/L for lightly doped silicon substrate.Nano porous structures; with layer thickness about 200nm are obtained after etching for 2hat the; temperature of 25℃.The average surface reflectivity of the prepared; nanostructures is under 5%for the wide band.While at the optimal; temperature of 50 ℃,stable structures of micro-nano porous silicon with; depth about 14-41mum are achieved after etching for about 2-4h.The; formation mechanism of the surface morphology of the Si wafers under; different reactant concentrations can be explained with the hole; injection model.The action of Cu and other metals on the etching is; studied,and the formation of the pores with cubic cone shape is also; analyzed.
dc.description.sponsorship国家自然科学基金; 福建省中青年教师教育科研
dc.language.isozh_CN
dc.subject金属辅助化学腐蚀(MACE)
dc.subject铜(Cu)催化
dc.subject多孔硅(PS)
dc.subject纳米结构
dc.subject表面减反
dc.subjectmetal-assisted chemical etching(MACE)
dc.subjectCu catalysis
dc.subjectporous silicon(PS)
dc.subjectnano-structure
dc.subjectsurface anti-reflection
dc.title铜辅助化学腐蚀条件对多孔硅的影响
dc.title.alternativeInfluence of Cu-assisted chemical etching preparation condition on the morphology of porous silicon
dc.typeArticle


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