Study on Schottky barrier of 4H-SiC at different anealing temperature
- 物理技术－已发表论文 
采用磁控溅射的方法在4H-SiC样品上分别沉积四种金属薄膜(Ag,Cu,Ni,Cr)形成Schottky 接触,研究了不同温度退火对Schottky势垒高度的影响。通过对样品的I-V测试结果的拟合,得到各金属/4H-SiC Schottky接触的势垒高度以及理想因子。在反向偏压100V下,样品的反向漏电流小于10-10A,说明样品的反向特性良好。样品经过不同温度的退火后,发现Cu、Ni与4H-SiC的势垒高度(SBH)随退火温度的升高而提高,超过某一温度,其整流特性变差; Ag、Cr的SBH在退火后降低。SBH与金属功函数呈线性关系(Cr金属除外),斜率为0.11。Schottky barriers were formed by sputtering the metals on the front side of 4H-SiC(Si face) by magnetron sputtering to study the rectifying characteristics of the contacts between the metals and 4H-SiC. The infections of the annealing under different temperature were also studied. Schottky barrier height (SBH) of metal/4H-SiC was evaluated from I-V measurements. Under a reverse voltage about 100 V, the reverse leaky current is below 0.1 nA. After annealed, the SBH of Cu/, Ni/4H-SiC was increased, but the SBH of Cr/, Ag/4H-SiC contact was decreased. The relationship between the work function of metals and the SBH was presented. The barrier height depends on the metal work function with slopes of 0.1 to 0.2 (except metal Cr).