Fabrication of MSM structure UV photodetector on 4H-SiC
- 物理技术－已发表论文 
MSM结构探测器具有结构与工艺简单、制备成本低、量子效率高等特点而在探测器应用中得到重视。本文制备了采用镍作为肖特基接触形成的MSM 4H—SiC紫外光电探测器,并测量和分析了在不同的偏压下其光电特性。结果表明,该探测器的暗电流非常小,在偏压为15V的时候,漏电流密度约为70 nA/cm2,光电流比暗电流高约2个数量级,其光谱响应表明,其最高光谱响应与380 nm的比值约为1000倍,说明该探测器具有良好的紫外可见比。Metal-semiconductor-metal (MSM) structure photodetectors have many advantages, including easy fabrication, simple wafer structure with only one mono-dopant active layer, and excellent potential to achieve high quantum efficiency and high speed. In this paper, we demonstrated fabrication of 4H-SiC UV photodetector with MSM structure by using nickel as Schottky contact. The result shows that detector has very low dark current; at the bias about 15 V, the density of dark current is about 70 nA/cm2. The illuminated current of the detector is about two orders magnitude higher than the dark current. The ratio of the responsivity about 290 nm to that at 380 nm is greater than 1000, implying that those devices have a great improved visible blind performance.