Development for InP MISFET for OEIC
- 物理技术－已发表论文 
用MOCVD方法生长了n＋－InP/n－InP/SI－InP材料，以HfO2为介质膜，用电子束蒸发和选择化学腐蚀研制成栅宽0.002mm、栅长为0.2mm的具有蘑菇状栅极结构的InPMISFET。直流特性测量表明，跨导gm=80－115ms/mm，开启电压VT－3.62V，沟道的有效电子迁移率ueff=674cm2/V·S，界面态密度NSS=9.56×1011cm－2。设计计算的特征频率fT97.1GHz，最高特征频率fmax64.7GHz，尚未发现器件性能的漂移现象。本器件可作为InP基的单片光电子集成器件(OEIC)的放大部分。A mushroom gate structure InP MISFET was developed by the electron beam evaporation and chosen chemical etching. The device has n＋ － InP/n－ InP/SI－ InP: Three layers structure which made by LP－ MOCVD as matter, has Ti－ Al film as gate electrode, has Ti－ Al/Au－ Ge film as source electrode or drain electrode. The gate dimension is 0.002mm× 0.2 mm. The D C Character shows that the transconductance gm is about 80～ 115 ms/mm, the threshold voltage VT is about － 3.62 V, the channel effective electron mobility is about 674 cm2/V· S, the average electron velocity Va is about 1.22× 107 cm/s, the interface state density Nss is about 9.56× 1011 cm－ 2, The cut－ off frequency fT is about 97.1GHz, the maximum working frequency fmax is about 64.7GHz. Up to now, we have not fought the flotation of device quality. The device can be used in InP substrate OEIC as amplificatory element.