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dc.contributor.authorRen, Yujie
dc.contributor.authorZhu, Chaofu
dc.contributor.authorCai, Weiwei
dc.contributor.author蔡伟伟
dc.contributor.authorLi, Huifeng
dc.contributor.authorJi, Hengxing
dc.contributor.authorKholmanov, Iskandar
dc.contributor.authorWu, Yaping
dc.contributor.authorPiner, Richard D.
dc.contributor.authorRuoff, Rodney S.
dc.date.accessioned2013-04-10T03:17:01Z
dc.date.available2013-04-10T03:17:01Z
dc.date.issued2012-04-16
dc.identifier.citationAPPLIED PHYSICS LETTERS,2012,100(16)zh_CN
dc.identifier.issn0003-6951
dc.identifier.urihttp://dx.doi.org/10.1063/1.4704803
dc.identifier.uriWOS:000303128500057
dc.identifier.urihttps://dspace.xmu.edu.cn/handle/2288/15561
dc.description.abstractGraphene grown by chemical vapor deposition on a Cu foil and transferred onto a Si wafer has been used to fabricate a field effect transistor device that was used to study the sensing of SO2 gas. It was found by in-situ measurements that the SO2 strongly p-dopes the graphene and dramatically shifts its Dirac point. This effect was used to monitor the SO2 gas. The detector can be completely reset by thermal annealing at 100 degrees C in high vacuum. The response and recovery of the detector are faster at higher temperatures. Moreover, the sensitivity of the SO2 graphene detector increases proportionally with increasing temperature. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4704803]zh_CN
dc.description.sponsorshipChina Scholarship Councilzh_CN
dc.language.isozhzh_CN
dc.publisherAMER INST PHYSICSzh_CN
dc.subjectannealingzh_CN
dc.subjectchemical vapour depositionzh_CN
dc.subjectfield effect transistorszh_CN
dc.subjectfullerene deviceszh_CN
dc.subjectgas sensorszh_CN
dc.subjectgraphenezh_CN
dc.subjectsulphur compoundszh_CN
dc.titleDetection of sulfur dioxide gas with graphene field effect transistorzh_CN


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