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dc.contributor.authorSun, Zhimei
dc.contributor.author孙志梅
dc.contributor.authorZhou, Jian
dc.contributor.authorMao, Ho-Kwang
dc.contributor.authorAhuja, Rajeev
dc.date.accessioned2013-04-10T03:08:50Z
dc.date.available2013-04-10T03:08:50Z
dc.date.issued2012-04-17
dc.identifier.citationPROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA,2012119(16):5948-5952zh_CN
dc.identifier.issn0027-8424
dc.identifier.urihttp://dx.doi.org/10.1073/pnas.1202875109
dc.identifier.uriWOS:000303246100017
dc.identifier.urihttps://dspace.xmu.edu.cn/handle/2288/15560
dc.description.abstractWith the advent of big synchrotron facilities around the world, pressure is now routinely placed to design a new material or manipulate the properties of materials. In GeTe, an important phase-change material that utilizes the property contrast between the crystalline and amorphous states for data storage, we observed a reversible phase transition of rhombohedral <-> rocksalt <-> orthorhombic <-> monoclinic coupled with a semiconductor <-> metal interconversion under pressure on the basis of ab initio molecular dynamics simulations. This interesting reversible phase transition under pressure is believed to be mediated by Peierls distortion in GeTe. Our results suggest a unique way to understand the reversible phase transition and hence the resistance switching that is crucial to the applications of phase-change materials in nonvolatile memory. The present finding can also be expanded to other IV-VI semiconductors.zh_CN
dc.description.sponsorshipNational Natural Science Foundation of China [60976005]; Outstanding Young Scientists Foundation of Fujian Province of China [2010J06018]; National Key Basic Research Program of China (973 Program) [2012CB825700]; Energy Frontier Research in Extreme Environments Center (EFree), an Energy Frontier Research Center; U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences [DE-SG0001057]; VR, Swedenzh_CN
dc.language.isoenzh_CN
dc.publisherNATL ACAD SCIENCESzh_CN
dc.subjecthigh pressurezh_CN
dc.subjectsemiconductor chalcogenideszh_CN
dc.subjectsemiconductor-metal interconversionzh_CN
dc.titlePeierls distortion mediated reversible phase transition in GeTe under pressurezh_CN
dc.typeArticlezh_CN


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