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dc.contributor.authorLin Qinghan
dc.contributor.authorQiu Liqin
dc.contributor.authorCheng Xuan
dc.contributor.authorZhou Jian
dc.contributor.author周健
dc.date.accessioned2013-04-02T02:59:06Z
dc.date.available2013-04-02T02:59:06Z
dc.date.issued2012-05-28
dc.identifier.citationACTA CHIMICA SINICA,2012,70(10):1173-1178zh_CN
dc.identifier.issn0567-7351
dc.identifier.uriWOS:000305778100006
dc.identifier.urihttp://www.medsci.cn/sci/show_paper.asp?id=8c6a3759391
dc.identifier.urihttps://dspace.xmu.edu.cn/handle/2288/15446
dc.description.abstractThe Bi2Te3-based thin films have been prepared by electrochemical deposition on stainless-steel substrates. The microstructure and composition of the films were studied by X-ray diffraction (XRD) and electron probe microanalysis (EPMA). The deposition mechanisms of Bi2Te3 thin films on stainless-steel substrates were preliminary investigated using electrochemical impedance spectroscopy (EIS). The results showed that the similar deposition mechanisms were obtained for Bi-Te binary and Bi-Te-Se ternary systems, i.e., the Bi3+, HTeO2+ and H2SeO3 were electrochemically reduced to form simple substances Bi(0), Te(0) and Se(0), respectively, then the Bi2Te3-based compounds were formed by reacting Te(0) or Se(0) with Bi(0). For Bi-Sb-Te ternary system, the HTeO2+ was first electrochemically reduced to form simple substance Te(0), and then the Bi2Te3-based compounds were formed by reacting Te(0) with Bi3+ and Sb(III). The deposition processes were controlled by electrochemical polarization.zh_CN
dc.description.sponsorshipFujian Key Laboratory of Advanced Materials, China [2006L2003]zh_CN
dc.language.isoenzh_CN
dc.publisherSCIENCE PRESSzh_CN
dc.subjectBi2Te3zh_CN
dc.subjectelectrochemical impedance spectroscopyzh_CN
dc.subjectelectrodepositionzh_CN
dc.titleElectrochemical Impedance Spectroscopic Study of Electrodeposited Bi2Te3-based Thin Filmszh_CN
dc.typeArticlezh_CN


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