Show simple item record

dc.contributor.authorLiu, Wen-Jie
dc.contributor.authorHu, Xiao-Long
dc.contributor.authorZhang, Jiang-Yong
dc.contributor.author张江勇
dc.contributor.authorWeng, Guo-En
dc.contributor.authorLv, Xue-Qin
dc.contributor.authorHuang, Hui-Jun
dc.contributor.authorChen, Ming
dc.contributor.authorCai, Xiao-Mei
dc.contributor.authorYing, Lei-Ying
dc.contributor.authorZhang, Bao-Ping
dc.contributor.author张保平
dc.date.accessioned2013-03-28T08:35:37Z
dc.date.available2013-03-28T08:35:37Z
dc.date.issued2012-06
dc.identifier.citationOPTICAL MATERIALS,2012,34(8):1327-1329zh_CN
dc.identifier.issn0925-3467
dc.identifier.urihttp://dx.doi.org/10.1016/j.optmat.2012.02.018
dc.identifier.uriWOS:000304224800017
dc.identifier.urihttps://dspace.xmu.edu.cn/handle/2288/15409
dc.description.abstractLow-temperature Sn fusion bonding technique was proposed to fabricate GaN-based blue vertical light-emitting diodes (LEDs) on Si substrate. First, by studying photoluminescence (PL) spectra of GaN LED epilayers/Ag-based mirror/Si structures fabricated at different bonding temperatures, it was confirmed that the quality of Ag-based mirror was not degraded when the bonding temperature was 250 degrees C. Then GaN-based blue vertical LEDs were fabricated at this bonding temperature. As compared with conventional GaN-based LEDs, the vertical LEDs revealed improved forward current-voltage characteristic, especially, the reverse current of the vertical LEDs was as low as 39 nA at the reverse bias of -10 V. In the mean time, vertical LEDs showed an increase in light output of about 127% at 200 mA, and no saturation was observed as the driving current increased to 500 mA. Further measurement revealed that vertical LEDs had a much lower junction temperature. These results indicate that the Sn fusion bonding technique is an effective way for fabrication of high-power GaN-based LEDs. (C) 2012 Elsevier B.V. All rights reserved.zh_CN
dc.description.sponsorshipNational Natural Science Foundation of China [91023048, 61106044, 10974165]; Doctoral Program Foundation of Institutions of Higher Education of China [20110121110029]zh_CN
dc.language.isoenzh_CN
dc.publisherELSEVIER SCIENCE BVzh_CN
dc.subjectGaNzh_CN
dc.subjectLow-temperature bondingzh_CN
dc.subjectVertical light-emitting diode (LED)zh_CN
dc.titleLow-temperature bonding technique for fabrication of high-power GaN-based blue vertical light-emitting diodeszh_CN
dc.typeArticlezh_CN


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record