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dc.contributor.authorTang, Ruifan
dc.contributor.authorHuang, Kai
dc.contributor.authorLai, Hongkai
dc.contributor.authorLi, Cheng
dc.contributor.authorWu, Zhiming
dc.contributor.authorKang, Junyong
dc.contributor.author康俊勇
dc.date.accessioned2013-03-21T02:16:22Z
dc.date.available2013-03-21T02:16:22Z
dc.date.issued2012-06-26
dc.identifier.citationNANOSCALE RESEARCH LETTERS,2012,7zh_CN
dc.identifier.issn1931-7573
dc.identifier.urihttp://dx.doi.org/10.1186/1556-276X-7-346
dc.identifier.uriWOS:000309158200001
dc.identifier.urihttps://dspace.xmu.edu.cn/handle/2288/15243
dc.description.abstractGeSi nanoislands grown on nanotip pre-patterned Si substrates at various temperatures are investigated. Nanoislands with a high density and narrow size distribution can be obtained within an intermediate temperature range, and the Ge atom diffusion length is comparable to half of the average distance of the Si nanotips. The Ge concentration distributions at the center and edge of the GeSi nanoislands are measured by scanning transmission electron microscopy. The results reveal that there is a Si core at the center of the GeSi nanoisland, but the Ge concentration presents a layered distribution above the Si nanotips. The radial component of the stress field in Ge layer near the Ge/Si interface on the planar, and the nanotip regions is qualitatively discussed. The difference of the stress field reveals that the experimentally observed concentration profile can be ascribed to the stress-induced interdiffusion self-limiting effect of the Si nanotips.zh_CN
dc.description.sponsorshipNational Basic Research Program of China [2011CB301905, 2012CB933503]; National Natural Science Foundation of China [61108064, 61036003, 61176092]; Fundamental Research Funds for the Central Universities [2011120143]; Ph.D. Programs Foundation of Ministry of Education of China [20110121110025]zh_CN
dc.language.isoenzh_CN
dc.publisherSPRINGERzh_CN
dc.subjectGeSi nanoislandszh_CN
dc.subjectNanotip pre-patterned Si substrateszh_CN
dc.subjectGe concentration distributionzh_CN
dc.subjectStress-induced interdiffusion self-limiting effectzh_CN
dc.titleGrowth of GeSi nanoislands on nanotip-patterned Si (100) substrates with a stress-induced self-limiting interdiffusionzh_CN
dc.typeArticlezh_CN


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