高择优取向Cu 电沉积层的XRD 研究
XRD Study on Highly Preferred Orientation Cu Electrodeposit
- 化学化工－已发表论文 
[中文文摘]采用电化学和XRD 方法在CuSO4+ H2SO4 电解液中获得Cu 电沉积层并研究其结构. 结果表明, 在4. 0 A/ dm2 和15. 0 A/ dm2 电流密度下可分别获得( 220) 和( 111) 晶面高择优取向Cu 镀层; Cu 镀层晶面织构度随厚度提高而增大, 获得( 111) 晶面高择优Cu 镀层的厚度约是( 220) 晶面的7 倍, 说明Cu( 220) 晶面比( 111) 晶面是更易保留的晶面, 且低电流密度下铜的电结晶更容易受电沉积条件控制; 较高的沉积电流密度有利于晶核的形成; Cu 镀层存在晶格畸变和晶胞参数的涨大.[英文文摘]Copper electrodeposit was obtained in CuSO 4+H 2SO4 electrolyte solution by electrodeposition and its structure was studied by XRD.The results showed that copper electoddeposits with the highly preferred orientations of (220)and (111) could be obtained at current density 4.0 A/dm 2 and 15.0 A/dm 2,respectively. The texture coefficient (TC) values were increased by thickness of Cu deposits. The thickness would be, to obtain Cu electrodeposit with(111) highly preferred orientation,about 7 times of that of (220) highly preferred orientat ion, which indicated that( 220) face was easier to be remained than (111) face and that elect rocrystallization of Cu at low current density w ould be easier controlled by electrodeposition condition.The higher deposition current density was benef it to nuclei formation. The Cu deposit was presented in the distortion and increase of crystal lattice.