Fabrication and Characterization of High-Quality Factor GaN-Based Resonant-Cavity Blue Light-Emitting Diodes
Date
2012-09-01Author
Hu, Xiao-Long
Liu, Wen-Jie
Weng, Guo-En
Zhang, Jiang-Yong
Lv, Xue-Qin
Liang, Ming-Ming
Chen, Ming
Huang, Hui-Jun
Ying, Lei-Ying
Zhang, Bao-Ping
张保平
Collections
- 物理技术-已发表论文 [4197]
Abstract
High-quality factor (Q > 1700) GaN-based blue resonant-cavity light-emitting diodes (RCLEDs) incorporating an InGaN/GaN multiquantum well active region, two high-reflectivity dielectric-distributed Bragg reflectors, and a thin indium tin oxide (ITO) layer are fabricated by a two-step substrate transfer technique. Electroluminescence measurements showed a narrow linewidth of 0.26 nm at the wavelength of 450.6 nm by precisely placing the ITO layer at the node position of the electric field, corresponding to a high Q-value of 1720. Further, adopting a chemical-mechanical polishing (CMP) technique to polish the GaN surface after the removal of sapphire substrate, an even higher Q-value of 2170 was obtained. This improvement was attributed to the exclusion of the defect-rich buffer layer and the achievement of a smooth surface with a root mean square roughness below 1 nm. The integrated electroluminescence intensity was enhanced by 40% as compared with the RCLEDs without CMP at a current density of 8 kA/cm(2).
Citation
IEEE PHOTONICS TECHNOLOGY LETTERS,20124,2(17):1472-1474URI
http://dx.doi.org/10.1109/LPT.2012.2206110WOS:000307216200004
https://dspace.xmu.edu.cn/handle/2288/14856