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dc.contributor.authorHong, Rongdun
dc.contributor.author洪荣墩
dc.contributor.authorZhou, Yi
dc.contributor.authorXie, Yannan
dc.contributor.authorXie, Yannan
dc.contributor.authorChen, Xiaping
dc.contributor.authorZhang, Zifeng
dc.contributor.authorWang, Kang L.
dc.contributor.authorWu, Zhengyun
dc.date.accessioned2013-01-25T08:12:44Z
dc.date.available2013-01-25T08:12:44Z
dc.date.issued2012-09
dc.identifier.citationOPTICS LETTERS,2012,37(17):3651-3653zh_CN
dc.identifier.issn0146-9592
dc.identifier.uriWOS:000308595300059
dc.identifier.urihttps://dspace.xmu.edu.cn/handle/2288/14732
dc.description.abstractA 4H-SiC based separate-absorption-multiplication (SAM) avalanche photodiode with a nanoscale multiplication region and a bulk absorption region is proposed and its optoelectronic performance is modeled. The results show that the avalanche breakdown voltage of the device is found to be dependent on the illumination condition. This is attributed to the existence of an illumination-dependent hole potential well in the upper center of the absorption region. Based on the illumination-dependence of avalanche breakdown voltage, a self-quenching and an ultrahigh UV/visible rejection ratio have been realized in this structure. (c) 2012 Optical Society of Americazh_CN
dc.description.sponsorshipNational Natural Science Foundation of China [61176049]; Natural Science Foundation of Fujian Province [2009J05151]zh_CN
dc.language.isoenzh_CN
dc.publisherOPTICAL SOC AMERzh_CN
dc.subjectPHOTODETECTORSzh_CN
dc.subjectPERFORMANCEzh_CN
dc.subjectDETECTORSzh_CN
dc.subjectLAYERzh_CN
dc.titleNanoscale avalanche photodiode with self-quenching and ultrahigh ultraviolet/visible rejection ratiozh_CN
dc.typeArticlezh_CN


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