Studies of the Corrosion Resistance of BP-212 Positive Resist
- 航空航天－已发表论文 
BP-212正性光刻胶作为掩膜在BHF腐蚀液中腐蚀十几分钟后,光刻胶被腐蚀液破坏而浮胶。玻璃或热生长的二氧化硅深槽腐蚀时间要求几十分钟,传统解决办法是多次光刻腐蚀。本文研究了光刻胶抗腐蚀特性,得出足够的活化时间、合适的匀胶转速、多次坚膜腐蚀可以延长产生浮胶时间的结论。BP-212 positive resist used for mask would be destroyed after Si or SiO2 was eroded in BHF more than 10 min. Glass or SiO2 must be etched several-ten minutes to gain deep grooves. The traditional solution was repetitious lithography and etching. The corrosion resistance of BP-212 positive resist was studied in this paper. The time that BP-212 was destroyed would be prolonged under the conditions of enough activated time,appropriate spin speed and several times hardbake.