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dc.contributor.author颜黄苹
dc.contributor.author冯勇建
dc.contributor.author许金海
dc.contributor.author卞剑涛
dc.date.accessioned2017-11-14T01:29:00Z
dc.date.available2017-11-14T01:29:00Z
dc.date.issued2001-05-30
dc.identifier.citation传感器技术,2001,(05):21-23
dc.identifier.issn1000-9787
dc.identifier.otherCGQJ200105005
dc.identifier.urihttps://dspace.xmu.edu.cn/handle/2288/142238
dc.description.abstract阐述了一种MOS场效应管 (MOSFET)压力微传感器的结构和基本工作原理。通过对该传感器的仿真实验 ,证明了MOSFET压力微传感器可通过简单的电压———电流转换原理 ,利用栅极电容的变化导致漏极电流与开启电压的变化而有效地测出作用于栅极膜片的压力的变化 ,具有较高的灵敏度与稳定性。
dc.description.abstractThe structure and basic working principle of a type of MOS field effect transistor pressure microsensor are presented. On the basis of simulation experiment, it proves that this microsensor can make use of the change of gate capacitance which leads to the change of drain current and threshold voltage to measure the change of pressure on the gate diaphragm effectively.This type of microsensor possesses higher sensitivity and higher stability.
dc.language.isozh_CN
dc.subject微传感器
dc.subjectMOS场效应管
dc.subject压力测量
dc.subjectmicrosensor
dc.subjectMOSFET
dc.subjectpressure measurement
dc.titleMOS场效应管压力微传感器
dc.title.alternativeMOS field effect transistor pressure microsensor
dc.typeArticle


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