On the Etching Revolution of Electrochemical Micro-(Nano-) Fabrication Technique-Its Limit and Solution
- 化学化工－已发表论文 
The etching resolution of electrochemical fabrication technique is influenced significantly by the diffusion Layer of the enchant. It has in gin shown that a fast ebbing rate can achieve higher etching resolution due to so-called heterogeneous scavenging effect, while a lower etching rate will result in rather lower etching resolution. For the latter case, the confined etchant layer technique(CELT) has been employed to improve the etching resolution i.e., a certain redox couple which can consume the etchant homogeneously and rapidly was added to the solution. The homogeneous scavenging effect confined etchant within a narrow layer around the electrode surface and much improved etching resolution was achieved. Using the CELT and a needle-shaped microelectrode, an etching spot of several micro-meters was obtained at silicon wafer surface.