Show simple item record

dc.contributor.author潘淼
dc.contributor.author李艳华
dc.contributor.author陈朝
dc.date.accessioned2012-05-31T01:37:48Z
dc.date.available2012-05-31T01:37:48Z
dc.date.issued2011-12
dc.identifier.citation半导体光电,2011(6):825-827,873zh_CN
dc.identifier.issn1001-5868
dc.identifier.urihttps://dspace.xmu.edu.cn/handle/2288/12576
dc.description.abstract【中文摘要】 采用化学腐蚀液织构了经磷吸杂处理后的多晶硅片。利用SEM分析了化学腐蚀后多晶硅表面形态,并通过反射谱测试分析了多晶硅片表面的陷光效果。实验结果表明:经酸腐蚀后的样品表面分布着均一的"蚯蚓状"的腐蚀坑,且反射率较低。在400~1 000nm波长范围内,反射率可达22.75%;生长了SiNx薄膜后,反射率减小至8.33%,比原始硅片的反射率低20.96%。 【英文摘要】 After phosphorus gettering pretreatment,the low-cost polycrystalline silicon(poly-Si) wafers are textured by chemical etching solution.The poly-Si surface and its light trapping were analyzed by scanning electron microscope(SEM) and reflection spectrum,respectively.Results show that the surface etched by the acid solution was distributed with uniform earthworm-like etched-pits,and it had a very low reflectance.The reflectivity of the sample can reach 22.75% within the wavelength of 400~1 100 nm.After the de...zh_CN
dc.description.sponsorship国家自然科学基金项目(61076056);福建省重大专项项目(2007HZ0005-2)zh_CN
dc.language.isozhzh_CN
dc.publisher《半导体光电》编辑部zh_CN
dc.subject低成本多晶硅zh_CN
dc.subject磷吸杂zh_CN
dc.subject织构zh_CN
dc.subject酸腐蚀zh_CN
dc.subjectlow-cost polycrystalline siliconzh_CN
dc.subjectphosphorus getteringzh_CN
dc.subjecttexturingzh_CN
dc.subjectacidic etchingzh_CN
dc.title低成本多晶硅片表面织构的研究zh_CN
dc.title.alternativeTexturing of Low-cost Polycrystalline Silicon Waferszh_CN
dc.typeArticlezh_CN


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record