低成本多晶硅片表面织构的研究

Abstract

【中文摘要】 采用化学腐蚀液织构了经磷吸杂处理后的多晶硅片。利用SEM分析了化学腐蚀后多晶硅表面形态,并通过反射谱测试分析了多晶硅片表面的陷光效果。实验结果表明:经酸腐蚀后的样品表面分布着均一的"蚯蚓状"的腐蚀坑,且反射率较低。在400～1 000nm波长范围内,反射率可达22.75%;生长了SiNx薄膜后,反射率减小至8.33%,比原始硅片的反射率低20.96%。 【英文摘要】 After phosphorus gettering pretreatment,the low-cost polycrystalline silicon(poly-Si) wafers are textured by chemical etching solution.The poly-Si surface and its light trapping were analyzed by scanning electron microscope(SEM) and reflection spectrum,respectively.Results show that the surface etched by the acid solution was distributed with uniform earthworm-like etched-pits,and it had a very low reflectance.The reflectivity of the sample can reach 22.75% within the wavelength of 400~1 100 nm.After the de...