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dc.contributor.authorSun, JJ
dc.contributor.authorHuang, HG
dc.contributor.authorTian, ZQ
dc.contributor.author田中群
dc.contributor.authorXie, L
dc.contributor.authorLuo, J
dc.contributor.authorYe, XY
dc.contributor.authorZhou, ZY
dc.contributor.authorXia, SH
dc.contributor.authorTian, ZW
dc.contributor.author田昭武
dc.date.accessioned2012-05-29T01:40:00Z
dc.date.available2012-05-29T01:40:00Z
dc.date.issued2001-08-03
dc.identifier.citationELECTROCHIMICA ACTA,2001,47(1-2):95-101zh_CN
dc.identifier.issn0013-4686
dc.identifier.urihttp://dx.doi.org/10.1016/S0013-4686(01)00596-5
dc.identifier.urihttps://dspace.xmu.edu.cn/handle/2288/12543
dc.description.abstractThe micromachining of GaAs with three different truly three-dimensional (3D) molds were performed by the confined etchant layer technique (CELT). The etched patterns were found, approximately, to be the negative copy of the 3D molds. The general comparison of CELT with the existing micromachining techniques, such as two-dimensional (2D) projection lithography and electro-discharge machining, was made. The replication of the complex microstructures down to micrometer scale has been done by CELT in a single step. The photoresist layer, together with the procedures of exposure, developing and removal of resist, could be eliminated. The advantages of CELT over the existing lithography techniques and its potential applications are discussed briefly. It has been shown that CELT could be developed as a complementary technique to the existing micromachining techniques in fabricating microdevices for microsystems. (C) 2001 Elsevier Science Ltd. All rights reserved.zh_CN
dc.language.isoenzh_CN
dc.publisherPERGAMON-ELSEVIER SCIENCE LTDzh_CN
dc.subjectelectrochemical micromachiningzh_CN
dc.subjectconfined etchant layer technique (CELT)zh_CN
dc.subjectmicrosystemzh_CN
dc.subjectmicroelectromechanical systems (MEMS)zh_CN
dc.subjectGaAszh_CN
dc.titleThree-dimensional micromachining for microsystems by confined etchant layer techniquezh_CN
dc.typeArticlezh_CN


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