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dc.contributor.author俞容文
dc.contributor.author吕毅军
dc.contributor.author郑健生
dc.date.accessioned2016-05-17T07:08:38Z
dc.date.available2016-05-17T07:08:38Z
dc.date.issued1999
dc.identifier.citation发光学报,1999,(1):24-26
dc.identifier.issn1000-7032
dc.identifier.otherFGXB901.006
dc.identifier.urihttps://dspace.xmu.edu.cn/handle/2288/121756
dc.description.abstract研究了无序gAInP样品的温度依赖关系.在低温Pl谱中,谱线呈单峰结构.随着温度从15k升高到250k,谱线半宽从16MEV增大到31MEV,并且发生红移(52MEV),同时强度减小了两个数量级.对实验结果的拟合表明,在两个温度区存在着两个不同的激活能.温度小于100k,激活能为4MEV;温度大于100k,激活能变为35MEV.我们认为低温温度行为由带边载流子的热离化伴随的无辐射跃迁所控制,而高温区的特征激活能和跃迁几率取决于子晶格的无序度
dc.description.abstractThe integrated photoluminescence(PL) intensity of disordered Ga 0.52 In 0.48 P samples grown by metalorganic vapor phase epitaxy(MOVPE) have been measured as a function of temperature.The fitting to the integrated intensity shows two activation energies in two different temperature regions.Below 100K, the activation energy is about 4meV; above 100K, the activation energy is 35meV.We conclude that the low temperature PL behaviour is likely controlled by carriers thermalization from spatial fluctuations of the band edges followed by non radiative recombination.The high temperature PL behaviour is suspected to be dominated by a nonradiative path whose characteristic activation energy and transition probability depends upon the degree of sublattice ordering.
dc.description.sponsorship国家自然科学基金;福建省自然科学基金
dc.language.isozh_CN
dc.subject光致发光
dc.subject有序度
dc.subjectⅢ-Ⅴ半导体
dc.subjectphotoluminescence
dc.subjectordering degree
dc.subjectⅢ Ⅴ semiconductors
dc.title无序GaInP光致发光谱的温度依赖关系
dc.title.alternativeTEMPERATURE DEPENDENCE of THE DISORDERED Ga 0.52 In 0.48 P PHOTOLUMINESCENCE SPECTRUM
dc.typeArticle


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