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dc.contributor.authorYan, JW
dc.contributor.author颜佳伟
dc.contributor.authorXie, ZX
dc.contributor.author谢兆雄
dc.contributor.authorCao, ZX
dc.contributor.author曹泽星
dc.contributor.authorZhou, CJ
dc.contributor.authorKang, JY
dc.contributor.authorMao, BW
dc.contributor.author毛秉伟
dc.date.accessioned2012-04-24T01:39:13Z
dc.date.available2012-04-24T01:39:13Z
dc.date.issued2003-05-13
dc.identifier.citationCHEMICAL PHYSICS LETTERS,2003,373(5-6):575-579zh_CN
dc.identifier.issn0009-2614
dc.identifier.urihttp://dx.doi.org/10.1016/S0009-2614(03)00649-3
dc.identifier.urihttps://dspace.xmu.edu.cn/handle/2288/12158
dc.description.abstractThis Letter presents a study on the oxidation of electrochemically deposited Sn monolayer on Au(1 1 1) surface and STM tip-induced reduction of as-prepared ultra thin SnO film. A threshold bias of 0.6 V (tip negative) at a low tunneling current of similar to50 pA is required to image the as-formed SnO thin film by STM, typical of a semiconductor characteristic. Increasing the tunneling current to similar to2 nA leads to the reduction of the SnO back to Sn. Based on the energy level calculation for the SnO, a mechanism involving direct electron tunneling is proposed to account for the tip-induced reduction. (C) 2003 Elsevier Science B.V. All rights reserved.zh_CN
dc.language.isoenzh_CN
dc.publisherELSEVIER SCIENCE BVzh_CN
dc.titleFormation and STM tip-induced reduction of ultra thin SnO film on Au(111)zh_CN
dc.typeArticlezh_CN


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