Show simple item record

dc.contributor.authorChen Li
dc.contributor.authorChi Gu
dc.contributor.authorZengtao Liu
dc.contributor.authorJinxiao Mi
dc.contributor.authorYong Yang
dc.contributor.author杨勇
dc.date.accessioned2011-11-11T14:47:48Z
dc.date.available2011-11-11T14:47:48Z
dc.date.issued2005-06
dc.identifier.citationCHEMICAL PHYSICS LETTERS,2005,411(1-3):198-202zh_CN
dc.identifier.issn0009-2614
dc.identifier.urihttp://dx.doi.org/doi:10.1016/j.cplett.2005.05.117
dc.identifier.urihttps://dspace.xmu.edu.cn/handle/2288/11164
dc.description.abstractSingle-crystal silicon nanowires with the prism structures were synthesized by chemical vapor deposition of SiH4 gas at 450 degrees C. Fe particles which were located at the tip of the CNTs were employed as a catalyst for the growth of silicon nanowires (SiNWs). Transmission electron microscopy studies of the materials showed that the nanowires have a diameter of 50-70 nm and a length of several micrometers. High-resolution transmission electron microscopy demonstrated that the nanowires have excellent single-crystal characteristics. Both the CNTs and Fe play a key role in the growth process of the SiNWs. A growth mechanism was proposed for the growth of silicon nanowires under our experimental conditions. (c) 2005 Elsevier B.V. All rights reserved.zh_CN
dc.language.isoenzh_CN
dc.publisherELSEVIER SCIENCE BVzh_CN
dc.titleIron-catalytic growth of prism-shaped single-crystal silicon nanowires by chemical vapor deposition of silanezh_CN
dc.typeArticlezh_CN


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record