The growth of Zn on a Si(100)-2 x 1 surface
- 化学化工－已发表论文 
Adsorption of Zn atoms on a Si(100)-2 x 1 surface was studied by scanning tunneling microscopy at room temperature. Narrow lines are grown perpendicular to the Si-dimer rows of the  direction at low coverage. The narrow line is formed by arraying rectangular Zn-3 dots, where a dot is composed of one Zn atom on a Si dimer and the other two in the neighboring two hollow sites. When the Si(100)-2 x 1 surface is covered with one monolayer of Zn, a 4 x 1 structure is established. More deposition of Zn on the 4 x 1 monolayer grows into three-dimensional Zn islands. (c) 2005 Elsevier B.V. All rights reserved.