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dc.contributor.authorLi, Chen
dc.contributor.authorLiu, Zengtao
dc.contributor.authorYang, Yong
dc.contributor.author杨勇
dc.date.accessioned2011-08-25T14:23:41Z
dc.date.available2011-08-25T14:23:41Z
dc.date.issued2006-03
dc.identifier.citationNANOTECHNOLOGY,2006,17(8):1851-1857zh_CN
dc.identifier.issn0957-4484
dc.identifier.urihttp://dx.doi.org/doi:10.1088/0957-4484/17/8/007
dc.identifier.urihttps://dspace.xmu.edu.cn/handle/2288/10677
dc.description.abstractCdS nanobelts and nanowires were successfully synthesized by simple thermal evaporation of CdS powder at a temperature as low as 650 degrees C, using pure H-2 as a carrier gas. The morphology of the products could be conveniently controlled by adjusting the deposition parameters. Electron microscopy studies of the materials showed that the single-crystalline CdS nanowires have a diameter of 200 nm and a length of tens of micrometres, and the nanobelts are 100 - 200 nm in width, 30 nm in thickness and tens of micrometres in length. High-resolution transmission electron microscopy demonstrated that the nanobelts, which are different from the nanowires growing along the [0001] direction, have three types of growth direction: [2 (1) over bar(1) over bar0], [01 (1) over bar0] and [0001]. It is demonstrated that a reductive carrier gas, such as hydrogen, plays an important role in the whole growth process of CdS nanowires and nanobelts.zh_CN
dc.language.isoenzh_CN
dc.publisherIOP PUBLISHING LTDzh_CN
dc.titleThe selective synthesis of single-crystalline CdS nanobelts and nanowires by thermal evaporation at lower temperaturezh_CN
dc.typeArticlezh_CN


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