纳米金刚石掺混对碳纳米管薄膜场发射性能的影响

Abstract

为了提高碳纳米管(CnT)阴极膜的场发射均匀性和稳定性,同时改善CnT膜的制作过程,本文提出一种掺混纳米金刚石(d)制作高性能丝网印刷CnT膜的方法.通过掺混碳相纳米金刚石,形成结构匹配的CnT/d复合膜,CnT膜内的间隙势垒减少,发射体分散更均匀,膜层与基底接触面积增加;同时,结合纳米金刚石的负电亲和势和场发射特性,可有效提高CnT阴极膜的导电性,增大有效发射体的密度.场发射特性测试表明CnT/d复合膜能得到1.89 V/μM的低开启电场,在2.8 V/μM场强下,场发射电流密度远高于普通CnT膜,达到463μA/CM~2,与普通CnT阴极膜相比,CnT/d复合膜的场发射稳定性显著提高,在400℃热处理后CnT/d膜激发阳极发光更均匀.

In order to improve the field emission uniformity and stability of carbon nanotube(CNT) cathode film and promote the production process of the CNT film,a method for forming high performance silk screen printed CNT film by mixing nano-diamond(D) is presented.By mixing nano-diamond as fillers,a composite film with matching structure is formed,the gap barriers existing between CNTs are reduced,the uniform dispersion of emitters is achieved,and the contact area between CNT film and the conductive substrate is increased as well.Meanwhile,by combining the negative affinity and field emission characteristics of nano-diamond,the electric conductivity of CNT cathode film and the density of effective emitters are remarkably increased.Field emission test results show that CNT/D film can obtain a low turn-on electric field of 1.89 V/μm,and under the field strength of 2.8 V/μm,the emission current density of CNT/D film is far higher than that of a usual CNT film,reaching 463 μA/cm~2.Moreover,CNT/D film has an improved field emission stability and can excite more uniform light-emitting photos after 400℃ heat treatment than a usual CNT film.