基于干湿法活化相结合的硅-硅低温键合

Abstract

针对传统的硅片低温键合方法,提出了一种将湿法活化与等离子体干法活化相结合的硅片直接键合方法.通过工艺参数实验得到了在等离子体活化时间为90S、预键合施加负载为1 500n时可以实现较好的键合.之后进行了此法与干法活化和湿法活化的对比实验,结果表明此法在获得较高键合强度的同时可以明显减少采用干法时在退火后空洞的产生,满足后续工艺的使用要求.最后用干湿结合的方法实现了带腔体硅片的键合,弥补了湿法活化在硅片键合上的运用限制.

Aimed at the traditional low-temperature silicon bonding methods,this article proposed another silicon direct bonding method combining the wet processes of activation with plasma dry of activation.A fine bonding quality can be achieved using the parameters of 90 s plasma activation time and 1 500 N prebonding pressure acquired by the process parameter experiment.Then a comparison experiment between this method and both the only dry and wet activation methods was presented.The consequence shows that this combination method can effectively avoid cavities that can be produced while using dry activation method after annealing,and a high bonding strength can be achieved at the same time.Subsequence application requirement can be meted in this way.At last,based on this combination of dry and wet activation method,the bonding of silicon and silicon with the hermetic cavity was realized making up for the limitation of wet activation method′s application.