激光显微拉曼技术检测晶体管工作电流导致的器件自加热现象

Abstract

随着晶体管尺寸的日益缩小,不良热效应成为晶体管失效重要原因之一。现有的检测器件热分布的手段的空间分辨率较低,不能原位直观地获得这些尺寸越来越小的晶体管的工作过程中的热分布情况。本文针对以上问题,在变温系统上探索利用激光显微拉曼光谱技术原位检测晶体管的自热效应,结果表明可以通过器件衬底上硅的一阶声子振动的拉曼谱峰频率随温度的位移的程度探测器件的温度,并测得β-fESI2/SI二极管工作温度。该技术是一种行之有效的探测器件温度变化的手段。

With the decrease of the chip size of transistors,notorious heating effect becomes one of the most important factors accounting for the failure of transistors.The existing methods for measuring the heat distribution of devices suffer from the low spatial resolution and cannot intuitively obtain the heat distribution during the working of the transistors with decreasing dimensions.Aiming to solve the problem,the present work employed laser Raman microscopy to in situ measure the self-heating effect of transistors with a temperature controlled device.The result reveals that it is feasible to determine the temperature of the device by analyzing the shift of Raman frequency of single phonon vibration of the silicon substrate with the temperature.The temperature of a β-FeSi2/Si bipolar junction was measured by this method.The result convincingly demonstrates that Raman microscopy can be an effective way to detect the temperature change of the device.