AZO/N--+-Si欧姆接触的研究
Study on Ohmic Contact of AZO/N--+-Si
Abstract
文章介绍了AzO/n+-SI欧姆接触特性的研究和AzO/n+-SI欧姆接触的制备新方法。实验发现AzO/n+-SI的退火温度和时间对其欧姆接触特性有很大的影响,在最优的退火温度和时间条件下,测得最小比接触电阻为7.32x10-4Ω.CM2。它满足多晶硅太阳能电池的要求,可用于高效率硅太阳能电池透明电极的制备。 The fabrication method and electrical characteristics of AZO/N+-Si(polycrystalline silicon) contact are presented.For AZO/N+-Si contact system,the optimal fabrication conditions for Ohmic contact are obtained,and the minimum specific contact resistance is tested to be 7.32×10-4 Ω·cm2,which can satisfy the performance requirements of devices and can be used for the fabrication of transparent electrodes in high-efficiency silicon solar cells.