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AZO/N--+-Si欧姆接触的研究
Study on Ohmic Contact of AZO/N--+-Si

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AZO_N--+-Si欧姆接触的研究.pdf (872.9Kb)
Date
2011
Author
杨倩
陈朝
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  • 航空航天-已发表论文 [2242]
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Abstract
文章介绍了AzO/n+-SI欧姆接触特性的研究和AzO/n+-SI欧姆接触的制备新方法。实验发现AzO/n+-SI的退火温度和时间对其欧姆接触特性有很大的影响,在最优的退火温度和时间条件下,测得最小比接触电阻为7.32x10-4Ω.CM2。它满足多晶硅太阳能电池的要求,可用于高效率硅太阳能电池透明电极的制备。
 
The fabrication method and electrical characteristics of AZO/N+-Si(polycrystalline silicon) contact are presented.For AZO/N+-Si contact system,the optimal fabrication conditions for Ohmic contact are obtained,and the minimum specific contact resistance is tested to be 7.32×10-4 Ω·cm2,which can satisfy the performance requirements of devices and can be used for the fabrication of transparent electrodes in high-efficiency silicon solar cells.
 
Citation
半导体光电,2011,(3):92-94+97
URI
https://dspace.xmu.edu.cn/handle/2288/105320

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