氧化铟锡薄膜电阻温度曲线中的滞后现象

Abstract

用电子束蒸发技术在玻璃衬底上制备氧化铟锡薄膜,并在500℃下氮气氛围中退火1H.将退火后的薄膜用光刻技术形成一个M型规则线图,并记录连续4轮由室温升至400℃,接着降至室温过程中样品的电阻变化.测量数据显示,电阻温度曲线在温度上升和下降阶段存在滞后现象.结合半导体载流子输运理论建立模型,与降温实验数据拟合程度很好,但当用来解释升温数据时却存在明显的偏差.由降温过程的数据计算得到氧化铟锡的电阻温度系数在温度大于380℃后趋于+1.393x10-3/℃,同时给出了氧化铟锡薄膜的激活能.

Indium tin oxide thin films on K9 glass substrates were prepared by ion-assisted electron beam evaporation technique and then annealed in N2 atmosphere under 500℃ for 1 hour.The resistance of a patterned sample was measured in the range of room temperature to 400℃,forwards and backwards,for four consecutive cycles.The measurement results showed that there exists hysteresis in the forward and backward curves.According to the semiconductor carrier transport theory,a model was introduced to fit the backward curve with good results.However,this model didn't work well with the forward curve.The temperature coefficient of resistance calculated from the measurement results is +1.393×10-3/℃ when temperature is above 380℃.And the activation energy of the film is also obtained.